DTIC ADA380319: Quantum 1/f Optimization of New Materials and Devices, Multiplexers, Low-Power Electronics and Investigation of 1/f Negative Entropystates
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DTIC ADA380319: Quantum 1/f Optimization of New Materials and Devices, Multiplexers, Low-Power Electronics and Investigation of 1/f Negative Entropystates
- Publication date
- 1999-02-28
- Topics
- DTIC Archive, Handel, Peter H, MISSOURI UNIV-ST LOUIS DEPT OF PHYSICS AND ASTRONOMY, *QUANTUM ELECTRONICS, *QUARTZ RESONATORS, *SURFACE ACOUSTIC WAVE DEVICES, FOUR WAVE MIXING, TIME DIVISION MULTIPLEXING, NOISE(ELECTRICAL AND ELECTROMAGNETIC), ENTROPY, MAGNETORESISTANCE, MULTIPLE QUANTUM WELLS,
- Collection
- dticarchive; additional_collections
- Language
- English
Application of the quantum 1/f noise theory to the control of frequency fluctuations in quartz is extended to low-Q and SAW resonators. The results are universal and are in good agreement with the experiment. The 1/f noise in GaN is calculated and found 3-10 times lower than in GaAs. The quantum 1/f theory was reformulated to put in evidence the manifest entropy conservation of the quantum 1/f fluctuation process with the help of the Quantum Information Theory and the notion of negative quantum conditional entropy. Furthermore. a method of gate current suppression in HFET with high dielectric constant gate insulation and a two-dimensional all-optical time-division multiplexing system based on spectral holography and 4-wave-mixing were found. Other important new developments reported include the prediction of fundamental 1/f fluctuations of the quantum 1/f decoherence rate and of the radiation resistance of antennas. The quantum 1/f theory was applied to flexible ultrathin semiconductor samples, as well as to nanoscale semiconductor and magnetic structures. The 1/f noise caused by bending is calculated for the first time. 1/f noise in multiple quantum wells is calculated for the case of the nonlinear holographic medium used in the all-optical TDM. The quantum 1/f theory also allowed the first calculation of 1/f noise in spin-polarized transport, with applications to spin-valves, spin-transistors and giant magnetoresistance effects. The present report allows to design low-noise, low phase-noise and lower-power electronic devices and systems.
- Addeddate
- 2018-04-29 04:28:02
- Foldoutcount
- 0
- Identifier
- DTIC_ADA380319
- Identifier-ark
- ark:/13960/t8z96091k
- Ocr_converted
- abbyy-to-hocr 1.1.37
- Ocr_module_version
- 0.0.21
- Page_number_confidence
- 74
- Page_number_module_version
- 1.0.3
- Pages
- 48
- Pdf_module_version
- 0.0.23
- Ppi
- 600
- Year
- 1999
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